TISP8201

TISP8201HDMR-S vs TISP8201MDR-S vs TISP8201MDR

 
PartNumberTISP8201HDMR-STISP8201MDR-STISP8201MDR
DescriptionSCRs Buffered N-Gate SCR DualSCRs PROTECTOR - BUFFERED N-GATE PROG. PROT.SCRs
ManufacturerBournsBourns Inc.-
Product CategorySCRsTVS - Thyristors-
RoHSY--
SeriesTISP8201MTISP8201M-
Breakover Current IBO Max60 A--
Rated Repetitive Off State Voltage VDRM120 V120 V-
Off State Leakage Current @ VDRM IDRM5 uA--
On State RMS Current It RMS---
Maximum Gate Peak Inverse Voltage- 120 V- 120 V-
Gate Trigger Current Igt15 mA--
Holding Current Ih Max20 mA20 mA-
Minimum Operating Temperature- 55 C- 40 C-
Maximum Operating Temperature+ 150 C+ 85 C-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOIC-8--
PackagingReelDigi-ReelR Alternate Packaging-
Breakover Voltage VBO82 V82 V-
Height2.2 - 0.1 mm--
Length5.6 mm--
Off State Capacitance CO50 pF35 pF-
TypeDual Polarity SLIC Overvoltage Protection--
Width5.6 mm--
BrandBourns--
Non Repetitive On State Current60 A11 A-
Product TypeSCRs--
Factory Pack Quantity2000--
SubcategoryThyristors--
TradenameTISPTISP-
Unit Weight0.004762 oz0.017870 oz-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Capacitance-35pF-
Number of Elements-2-
Voltage Breakover-95V-
Voltage Off State-120V-
Current Peak Pulse 10 1000μs-45A-
Voltage On State---
Current Peak Pulse 8 20μs---
Current Hold Ih-20mA-
Gate Trigger Current Igt-- 5 mA-
On State RMS Current It RMS---
Off State Leakage Current VDRM IDRM-0.005 mA-
Hersteller Teil # Beschreibung RFQ
Bourns
Bourns
TISP8201HDMR-S SCRs Buffered N-Gate SCR Dual
TISP8201MDR-S SCRs PROTECTOR - BUFFERED N-GATE PROG. PROT.
TISP8201HDMR-S SCRs Buffered N-Gate SCR Dual
TISP8201MDR SCRs
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