 |  | | |
| PartNumber | TJ10S04M3L(T6L1,NQ | TJ10S04M3L(T6L1NQ | TJ10S04M3L(T6L1NQ-ND |
| Description | MOSFET P-Ch MOS 33.8 mOhm 10V 10uA 2.0 to 3.0V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 33.8 mOhms | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | TJ10S04M3L | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 5.5 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.011993 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TJ10S04M3L(T6L1,NQ | MOSFET P-Ch MOS 33.8 mOhm 10V 10uA 2.0 to 3.0V | |
| TJ10S04M3L(T6L1,NQ | MOSFET P-Ch MOS 33.8 mOhm 10V 10uA 2.0 to 3.0V | ||
| TJ10S04M3L(T6L1NQ | Neu und Original | ||
| TJ10S04M3L(T6L1NQ-ND | Neu und Original |