 | | | |
| PartNumber | TJ80110C | TJ80110H | TJ80900T10100 |
| Description |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TJ80S04M3L(T6L1,NQ | MOSFET P-Ch MOS -80A -40V 100W 7770pF 0.0052 | |
| TJ8S06M3L(T6L1,NQ) | Darlington Transistors MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104 | ||
| TJ80S04M3L(T6L1,NQ | MOSFET P-Ch MOS -80A -40V 100W 7770pF 0.0052 | ||
| TJ80110C | Neu und Original | ||
| TJ80110H | Neu und Original | ||
| TJ80900T10100 | Neu und Original | ||
| TJ80S04M3L | Neu und Original | ||
| TJ80S04M3L(T6L1NQ | Neu und Original | ||
| TJ80X04M3L | Neu und Original | ||
| TJ80X06M3L | Neu und Original | ||
| TJ8S06K3L | Neu und Original | ||
| TJ8S06M3L | MOSFET, P-CH, -10V, -8A, TO-252, Transistor Polarity:P Channel, Continuous Drain Current Id:-8A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):0.08ohm, Rds(on) Test Voltage Vgs:-10V, Thre | ||
| TJ8S06M3L(T6L1NQ) | Neu und Original | ||
| TJ8S06M3L,LXHQ(0 | Neu und Original | ||
| TJ80S04M3L(T6L1NQ-ND | Neu und Original | ||
| TJ8S06M3L(T6L1NQ)-ND | Neu und Original |