 |  | | |
| PartNumber | TK100A06N1,S4X | TK100A06N1 K100A06N1 | TK100A06N1,S4X(S |
| Description | MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V | MOSFET U-MOS8 60V/100A TO220SIS, BG | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 140 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 45 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK100A06N1 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK100A06N1,S4X | MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V | |
| TK100A06N1 K100A06N1 | Neu und Original | ||
| TK100A06N1,S4X | MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V | ||
| TK100A06N1,S4X(S | MOSFET U-MOS8 60V/100A TO220SIS, BG | ||
| TK100A06N1S4XS | Neu und Original | ||
| TK100A06N1S4X | MOSFET MOSFET TRAN TO-220SIS 45W /1 | ||
| TK100A06N1S4X-ND | Neu und Original |