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| PartNumber | TK10A60D(STA4,Q,M) | TK10A60D(STA4 | TK10A60D(STA4) |
| Description | MOSFET MOSFET N-ch 600V 10A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220SIS-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 750 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 45 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK10A60D | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Field Effect Transistor Silicon N Channel MOS Type | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Forward Transconductance Min | 1.5 S | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | - | - |
| Typical Turn On Delay Time | 55 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK10A60D(STA4,Q,M) | MOSFET MOSFET N-ch 600V 10A | |
| TK10A60D(STA4 | Neu und Original | ||
| TK10A60D(STA4) | Neu und Original | ||
| TK10A60D(STA4,Q,M) | Neu und Original | ||
| TK10A60D(STA4,X,M) | Neu und Original | ||
| TK10A60D(STA4,X,S) | Neu und Original | ||
| TK10A60D(STA4.Q.M) | Neu und Original | ||
| TK10A60D(STA4QM) | MOSFET N-CH 600V TO220SIS | ||
| TK10A60D(STA4XM) | Neu und Original |