TK13A60D(ST

TK13A60D(STA4,Q,M) vs TK13A60D(STA vs TK13A60D(STA4QM)

 
PartNumberTK13A60D(STA4,Q,M)TK13A60D(STATK13A60D(STA4QM)
DescriptionMOSFET N-Ch RDS 0.33 Ohm Yfs 6.5s 10uA 600V
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance430 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge40 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height15 mm--
Length10 mm--
SeriesTK13A60D--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time50 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time140 ns--
Typical Turn On Delay Time100 ns--
Unit Weight0.059966 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TK13A60D(STA4,Q,M) MOSFET N-Ch RDS 0.33 Ohm Yfs 6.5s 10uA 600V
TK13A60D(STA4,Q,M) MOSFET N-Ch RDS 0.33 Ohm Yfs 6.5s 10uA 600V
TK13A60D(STA Neu und Original
TK13A60D(STA4QM) Neu und Original
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