 |  | |
| PartNumber | TK22E10N1,S1X | TK22A10N1,S4X |
| Description | MOSFET N-Ch PWR FET 52A 72W 100V VDSS | MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V |
| Manufacturer | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 52 A | 22 A |
| Rds On Drain Source Resistance | 13.8 mOhms | 11.5 mOhms |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Configuration | Single | Single |
| Height | 15.1 mm | 15 mm |
| Length | 10.16 mm | 10 mm |
| Series | TK22E10N1 | TK22A10N1 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.45 mm | 4.5 mm |
| Brand | Toshiba | Toshiba |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Qg Gate Charge | - | 28 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 30 W |
| Channel Mode | - | Enhancement |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK22E10N1,S1X | MOSFET N-Ch PWR FET 52A 72W 100V VDSS | |
| TK22A10N1,S4X | MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V | ||
| TK22A10N1,S4X | MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V | ||
| TK22E10N1,S1X | MOSFET N-Ch PWR FET 52A 72W 100V VDSS | ||
Amphenol Anytek |
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