TK31A60W,S

TK31A60W,S4VX vs TK31A60W,S4VX(M vs TK31A60W,S4VX(M)

 
PartNumberTK31A60W,S4VXTK31A60W,S4VX(MTK31A60W,S4VX(M)
DescriptionMOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30.8 A--
Rds On Drain Source Resistance73 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge86 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation45 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height15 mm--
Length10 mm--
SeriesTK31A60W--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time32 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time165 ns--
Typical Turn On Delay Time70 ns--
Unit Weight0.211644 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TK31A60W,S4VX MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC
TK31A60W,S4VX Darlington Transistors MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC
TK31A60W,S4VX(M Neu und Original
TK31A60W,S4VX(M) Neu und Original
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