 |  | | |
| PartNumber | TK31E60X,S1X | TK31E60X | TK31E60X,S1X(S |
| Description | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 7.7 A | - | - |
| Rds On Drain Source Resistance | 73 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 65 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 230 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 15.1 mm | - | - |
| Length | 10.16 mm | - | - |
| Series | TK31E60X | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.45 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 22 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 130 ns | - | - |
| Typical Turn On Delay Time | 55 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK31E60X,S1X | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | |
| TK31E60X,S1X | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | ||
| TK31E60X,S1X(S) | MOSFETs | ||
| TK31E60X | Neu und Original | ||
| TK31E60X,S1X(S | Neu und Original | ||
| TK31E60XS1X-ND | Neu und Original |