TK31N60W5,S

TK31N60W5,S1VF vs TK31N60W5,S1VF(S

 
PartNumberTK31N60W5,S1VFTK31N60W5,S1VF(S
DescriptionMOSFET MOSFET NChtrr135ns 0.082ohm DTMOSMOSFET N-CHANNEL 600V 30.8A TO247, PK
ManufacturerToshiba-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-247-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current30.8 A-
Rds On Drain Source Resistance82 mOhms-
Vgs th Gate Source Threshold Voltage4.5 V-
Vgs Gate Source Voltage30 V-
Qg Gate Charge105 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation230 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameDTMOSIV-
Height20.95 mm-
Length15.94 mm-
SeriesTK31N60W-
Transistor Type1 N-Channel-
Width5.02 mm-
BrandToshiba-
Product TypeMOSFET-
Factory Pack Quantity30-
SubcategoryMOSFETs-
Unit Weight1.340411 oz-
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TK31N60W5,S1VF MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS
TK31N60W5,S1VF MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS
TK31N60W5,S1VF(S MOSFET N-CHANNEL 600V 30.8A TO247, PK
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