TK4A

TK4A60DB(STA4,Q,M) vs TK4A65DA(STA4,Q,M)

 
PartNumberTK4A60DB(STA4,Q,M)TK4A65DA(STA4,Q,M)
DescriptionMOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 OhmMOSFET N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm
ManufacturerToshibaToshiba
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220FP-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V650 V
Id Continuous Drain Current3.7 A4 A
Rds On Drain Source Resistance2.2 Ohms1.9 Ohms
Pd Power Dissipation25 W35 W
ConfigurationSingleSingle
Height15 mm15 mm
Length10 mm10 mm
SeriesTK4A60DBTK4A65DA
Transistor Type1 N-Channel1 N-Channel
Width4.5 mm4.5 mm
BrandToshibaToshiba
Product TypeMOSFETMOSFET
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Unit Weight0.211644 oz0.211644 oz
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TK4A60DB(STA4,Q,M) MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm
TK4A65DA(STA4,Q,M) MOSFET N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm
TK4A65DA(STA4,Q,M) MOSFET N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm
TK4A60DB(STA4,Q,M) MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm
TK4A60DAQM Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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TK4A65DA Neu und Original
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TK4A65DA,TK4A65D Neu und Original
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TK4A60DB(STA4QM)-ND Neu und Original
TK4A65DA(STA4QM)-ND Neu und Original
TK4A60DAR Neu und Original
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