 |  | | |
| PartNumber | TK4A60DA(STA4,Q,M) | TK4A60DA(STA | TK4A60DA(STA,X,M) |
| Description | MOSFET N-ch 600V 3.5A TO-220SIS | ||
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 3.5 A | - | - |
| Rds On Drain Source Resistance | 1.7 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 4.4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK4A60DA | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Forward Transconductance Min | 0.6 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK4A60DA(STA4,Q,M) | MOSFET N-ch 600V 3.5A TO-220SIS | |
| TK4A60DA(STA4,Q,M) | Darlington Transistors MOSFET N-ch 600V 3.5A TO-220SIS | ||
| TK4A60DA(STA | Neu und Original | ||
| TK4A60DA(STA,X,M) | Neu und Original | ||
| TK4A60DA(STA4,X,M | Neu und Original | ||
| TK4A60DA(STA4,X,M) | Neu und Original | ||
| TK4A60DA(STA4,X,S) | Neu und Original | ||
| TK4A60DA(STA4QM) | Neu und Original | ||
| TK4A60DA(STA4XM | Neu und Original | ||
| TK4A60DA(STA4XM) | Neu und Original | ||
| TK4A60DA(STA4QM)-ND | Neu und Original |