PartNumber | TK65E10N1,S1X | TK650A60F,S4X | TK65A10N1,S4X |
Description | MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | MOSFET N-Ch TT-MOSIX 600V 45W 1320pF 11A | MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220SIS-3 | TO-220FP-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 600 V | 100 V |
Id Continuous Drain Current | 148 A | 11 A | 65 A |
Rds On Drain Source Resistance | 4 mOhms | 650 mOhms | 4 mOhms |
Vgs Gate Source Voltage | 20 V | 30 V | 20 V |
Qg Gate Charge | 81 nC | 34 nC | 81 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 192 W | 45 W | 45 W |
Configuration | Single | Single | Single |
Packaging | Reel | Tube | - |
Height | 15.1 mm | - | 15 mm |
Length | 10.16 mm | - | 10 mm |
Series | TK65E10N1 | TK650A60F | TK65A10N1 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 4.45 mm | - | 4.5 mm |
Brand | Toshiba | Toshiba | Toshiba |
Fall Time | 26 ns | 22 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 19 ns | 25 ns | - |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 85 ns | 85 ns | - |
Typical Turn On Delay Time | 44 ns | 55 ns | - |
Unit Weight | 0.211644 oz | - | 0.211644 oz |
Vgs th Gate Source Threshold Voltage | - | 2 V | 4 V |
Channel Mode | - | Enhancement | Enhancement |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Toshiba |
TK65G10N1,RQ | MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK | |
TK65E10N1,S1X | MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | ||
TK650A60F,S4X | MOSFET N-Ch TT-MOSIX 600V 45W 1320pF 11A | ||
TK65A10N1,S4X | MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V | ||
TK65E10N1,S1X | IGBT Transistors MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | ||
TK65G10N1,RQ | MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK | ||
TK65A10N1,S4X | MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V | ||
TK65E10N1S1X | MOSFET 100V N-CH PWR FET 148A 192W | ||
TK65000FTL-G | Neu und Original | ||
TK65015M | Neu und Original | ||
TK65015MTL | Neu und Original | ||
TK65018METR | Neu und Original | ||
TK65025 | Neu und Original | ||
TK65025M | Neu und Original | ||
TK65025MTL | IC REG BOOST 3V 4MA SOT23L-6 | ||
TK65064AB6 | Neu und Original | ||
TK65600 | Neu und Original | ||
TK65600AB6GHB | Neu und Original | ||
TK65600BTB | Neu und Original | ||
TK65600BTB-G | Neu und Original | ||
TK65600BTBG | Neu und Original | ||
TK65604AB6GHB | Neu und Original | ||
TK65700F-G | Neu und Original | ||
TK65911M | Neu und Original | ||
TK65911MTL | Neu und Original | ||
TK65917M | Neu und Original | ||
TK65919MTL | Neu und Original | ||
TK65919MTLG | Neu und Original | ||
TK65929MTL-G | Neu und Original | ||
TK65931 | Neu und Original | ||
TK65931MTL | Neu und Original | ||
TK65933 | Neu und Original | ||
TK65933MTL | EL DISPLAY DRIVER, PDSO6 | ||
TK65939MTL/C9 | Neu und Original | ||
TK65A10N1 | Neu und Original | ||
TK65A10N1,S4X(S | Neu und Original | ||
TK65A10N1S4X | MOSFET MOSFET TRAN TO-220AB(OS) | ||
TK65A10N1S4X(S | Trans MOSFET N 100V 148A 3-Pin TO-220SIS Tube (Alt: TK65A10N1,S4X(S) | ||
TK65E10N1 | Neu und Original | ||
TK65E10N1,K65E10N1 | Neu und Original | ||
TK65E10N1,S1X(S | Neu und Original | ||
TK65E10N1S1X(S | Neu und Original | ||
TK65G10N1 | MOSFET POWER N-CH 136A D2PAK-3, RL | ||
TK65G10N1,RQ(S | Trans MOSFET N-CH 100V 136A 3-Pin D2PAK (Alt: TK65G10N1,RQ(S) | ||
TK65G10N1RQ | MOSFET MOSFET TRAN DP(OS) | ||
TK65G10N1RQ(S | Neu und Original | ||
TK650A60FS4X-ND | Neu und Original | ||
TK65A10N1S4X-ND | Neu und Original | ||
TK65E10N1S1X-ND | Neu und Original | ||
TK65G10N1RQCT-ND | Neu und Original |