 |  | | |
| PartNumber | TK6P60W,RVQ | TK6P60W,RGELQ | TK6P60W,RPAVQ |
| Description | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 6.2 A | - | - |
| Rds On Drain Source Resistance | 820 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | TK6P60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK6P60W,RVQ | MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC | |
| TK6P60W,RVQ | Trans MOSFET N-CH Si 600V 6.2A 3-Pin(2+Tab) DPAK | ||
| TK6P60W,RGELQ | Neu und Original | ||
| TK6P60W,RPAVQ | Neu und Original | ||
| TK6P60W,RVQCS | Neu und Original |