TK6Q

TK6Q60W,S1VQ vs TK6Q60V vs TK6Q60W

 
PartNumberTK6Q60W,S1VQTK6Q60VTK6Q60W
DescriptionMOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current6.2 A--
Rds On Drain Source Resistance680 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation60 W--
ConfigurationSingle--
TradenameDTMOSIV--
Height6.1 mm--
Length6.65 mm--
SeriesTK6Q60W--
Transistor Type1 N-Channel--
Width2.3 mm--
BrandToshiba--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns--
Typical Turn On Delay Time40 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TK6Q60W,S1VQ MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
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TK6Q60W Neu und Original
TK6Q60W,S1VQ(S Neu und Original
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TK6Q60WS1VQ(S Neu und Original
TK6Q65W Neu und Original
TK6Q65WS1Q Neu und Original
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TK6Q65WS1Q-ND Neu und Original
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