 |  | | |
| PartNumber | TK8A50D(STA4,Q,M) | TK8A50D(STA4 | TK8A50D(STA4,Q,M |
| Description | MOSFET N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220SIS-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 850 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 16 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 40 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK8A50D | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Forward Transconductance Min | 1 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.068784 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK8A50D(STA4,Q,M) | MOSFET N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | |
| TK8A50D(STA4,Q,M) | MOSFET N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | ||
| TK8A50D(STA4 | Neu und Original | ||
| TK8A50D(STA4,Q,M | Neu und Original | ||
| TK8A50D(STA4,X,S) | Neu und Original | ||
| TK8A50D(STA4QM | Neu und Original | ||
| TK8A50D(STA4QM) | Neu und Original | ||
| TK8A50D(STA4XS) | Neu und Original | ||
| TK8A50D(STA4QM)-ND | Neu und Original |