TN0610N

TN0610N3-G vs TN0610N2 vs TN0610N3

 
PartNumberTN0610N3-GTN0610N2TN0610N3
DescriptionMOSFET 100V 1.5OhmMOSFET 100V 1.5Ohm
ManufacturerMicrochip-SUPERTEX
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current500 mA--
Rds On Drain Source Resistance1.5 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingBulk--
Transistor Type1 N-Channel--
TypeFET--
BrandMicrochip Technology--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time6 ns--
Unit Weight0.016000 oz--
Hersteller Teil # Beschreibung RFQ
Microchip Technology
Microchip Technology
TN0610N3-G-P003 MOSFET N-CH Enhancmnt Mode MOSFET
TN0610N3-G-P013 MOSFET N-CH Enhancmnt Mode MOSFET
TN0610N3-G MOSFET 100V 1.5Ohm
TN0610N3-G-P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0610N3-G-P003 MOSFET N-CH 100V 500MA TO92-3
TN0610N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0610N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0610N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
TN0610N2 Neu und Original
TN0610N3 MOSFET 100V 1.5Ohm
TN0610N3-G MOSFET N-CH 100V 500MA TO92-3
TN0610N3-G P003 Neu und Original
TN0610N3-P002 MOSFET 100V 1.5Ohm
TN0610N5 Neu und Original
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