TP0606N

TP0606N3-G vs TP0606N2 vs TP0606N3

 
PartNumberTP0606N3-GTP0606N2TP0606N3
DescriptionMOSFET 60V 3.5OhmMOSFET 60V 3.5Ohm
ManufacturerMicrochip-
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current320 mA--
Rds On Drain Source Resistance3.5 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingBulk--
Height5.33 mm--
Length5.21 mm--
Transistor Type1 P-Channel--
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Forward Transconductance Min300 mS--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.016000 oz--
Hersteller Teil # Beschreibung RFQ
Microchip Technology
Microchip Technology
TP0606N3-G MOSFET 60V 3.5Ohm
TP0606N3-G-P002 MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G-P003 MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G P013 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G P005 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G P014 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G-P003 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N3-G-P002 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0606N2 Neu und Original
TP0606N3 MOSFET 60V 3.5Ohm
TP0606N3-G MOSFET P-CH 60V 320MA TO92-3
TP0606N3-G P003 Neu und Original
TP0606N5 Neu und Original
TP0606N6 Neu und Original
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