TP0610T

TP0610T-G vs TP0610T vs TP0610T-T

 
PartNumberTP0610T-GTP0610TTP0610T-T
DescriptionMOSFET -60V 100hmMOSFET 60V 0.12A 0.36W
ManufacturerMicrochip-SILICONIX
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current120 mA--
Rds On Drain Source Resistance10 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation360 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.93 mm--
Length2.92 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel--
TypeFET--
Width1.3 mm--
BrandMicrochip Technology--
Forward Transconductance Min60 mS--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
Microchip Technology
Microchip Technology
TP0610T-G MOSFET -60V 100hm
TP0610T-G MOSFET P-CH 60V 0.12A SOT23-3
TP0610T MOSFET 60V 0.12A 0.36W
TP0610T-T Neu und Original
TP0610T-T1 MOSFET Transistor, P-Channel, TO-236AA
TP0610T-T1 , MAX2389GC Neu und Original
TP0610T-T1-E3 Neu und Original
TP0610T-T1-GE3 Neu und Original
TP0610T-T1-GE3 (VISHAY) Neu und Original
TP0610T-T1/TOP Neu und Original
TP0610T-TI Neu und Original
TP0610T/R0TS Neu und Original
TP0610TT1 Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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