PartNumber | TP2535N3-G | TP2535N3-G P003 | TP2535N3-G P002 |
Description | MOSFET 350V 25Ohm | MOSFET P-CH Enhancmnt Mode MOSFET | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET |
Manufacturer | Microchip | Microchip | Microchip Technology |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 350 V | 350 V | - |
Id Continuous Drain Current | 86 mA | 86 mA | - |
Rds On Drain Source Resistance | 25 Ohms | 30 Ohms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 740 mW | 740 mW | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Bulk | Reel | Reel |
Height | 5.33 mm | 5.33 mm | - |
Length | 5.21 mm | 5.21 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Type | FET | - | - |
Width | 4.19 mm | 4.19 mm | - |
Brand | Microchip Technology | Microchip Technology | - |
Fall Time | 10 ns | 13 ns | 13 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 10 ns | 10 ns | 10 ns |
Factory Pack Quantity | 1000 | 2000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 20 ns | 20 ns | 20 ns |
Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
Package Case | - | - | TO-92-3 |
Pd Power Dissipation | - | - | 740 mW |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | - 86 mA |
Vds Drain Source Breakdown Voltage | - | - | - 350 V |
Rds On Drain Source Resistance | - | - | 30 Ohms |