TP533

TP5335K1-G vs TP5335 vs TP5335K1

 
PartNumberTP5335K1-GTP5335TP5335K1
DescriptionMOSFET 350V 25OhmMOSFET 350V 25Ohm
ManufacturerMicrochip-SUPERTEX
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage350 V--
Id Continuous Drain Current85 mA--
Rds On Drain Source Resistance30 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation360 mW--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
ProductMOSFET Small Signal--
Transistor Type1 P-Channel-1 P-Channel
TypeFET--
BrandMicrochip Technology--
Fall Time15 ns-15 ns
Product TypeMOSFET--
Rise Time15 ns-15 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns-25 ns
Typical Turn On Delay Time20 ns-20 ns
Unit Weight0.000282 oz-0.050717 oz
Package Case--SOT-23-3
Pd Power Dissipation--360 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 85 mA
Vds Drain Source Breakdown Voltage--- 350 V
Rds On Drain Source Resistance--30 Ohms
Hersteller Teil # Beschreibung RFQ
Microchip Technology
Microchip Technology
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