PartNumber | TPH11003NL,LQ | TPH110 | TPH11003NL |
Description | MOSFET N-Ch DTMOS VII-H 21W 510pF 32A 30V | ||
Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOP-Advance-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 32 A | - | - |
Rds On Drain Source Resistance | 12.6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 7.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 21 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 0.95 mm | - | - |
Length | 5 mm | - | - |
Series | TPH11003NL | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 5 mm | - | - |
Brand | Toshiba | - | - |
Fall Time | 1.9 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 2.1 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13.5 ns | - | - |
Typical Turn On Delay Time | 7.5 ns | - | - |
Unit Weight | 0.030018 oz | - | - |
Package Case | - | 8-PowerVDFN | - |
Operating Temperature | - | 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-SOP Advance | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 1.6W | - |
Drain to Source Voltage Vdss | - | 60V | - |
Input Capacitance Ciss Vds | - | 2000pF @ 30V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 17A (Tc) | - |
Rds On Max Id Vgs | - | 11.4 mOhm @ 8.5A, 10V | - |
Vgs th Max Id | - | 2.5V @ 200μA | - |
Gate Charge Qg Vgs | - | 23nC @ 10V | - |