TPH20

TPH2010FNH,L1Q vs TPH2006PS vs TPH2010FNH

 
PartNumberTPH2010FNH,L1QTPH2006PSTPH2010FNH
DescriptionMOSFET UMOSVIII 250V 205m (VGS=10V) SOP-ADV
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance168 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation42 W--
ConfigurationTriple--
Channel ModeEnhancement--
PackagingReel--
Height0.95 mm--
Length5 mm--
SeriesTPH2010FNH--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time4.5 ns--
Product TypeMOSFET--
Rise Time5.2 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.030018 oz--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TPH2010FNH,L1Q MOSFET UMOSVIII 250V 205m (VGS=10V) SOP-ADV
TPH2010FNH,L1Q MOSFET UMOSVIII 250V 205m (VGS=10V) SOP-ADV
TPH2006PS Neu und Original
TPH2010FNH Neu und Original
TPH2010FNHL1Q MOSFET POWER MOSFET TRANSISTOR
TPH2010FNHL1QCT-ND Neu und Original
TPH2010FNHL1QDKR-ND Neu und Original
TPH2010FNHL1QTR-ND Neu und Original
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