 |  |  | |
| PartNumber | TPH3205WSBQA | TPH3202LD | TPH3202LS |
| Description | MOSFET GAN FET 650V 35A TO247 | GANFET N-CH 600V 9A PQFN | GANFET N-CH 600V 9A PQFN |
| Manufacturer | Transphorm | - | - |
| Product Category | MOSFET | - | - |
| Technology | GaN Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 62 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Vgs Gate Source Voltage | 18 V | - | - |
| Qg Gate Charge | 42 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Transphorm | - | - |
| Fall Time | 8.6 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.6 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 36 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Transphorm |
TPH3212PS | MOSFET GAN FET 650V 27A TO220 | |
| TPH3208PS | MOSFET GAN FET 650V 20A TO220 | ||
| TPH3206PSB | MOSFET GAN FET 650V 16A TO220 | ||
| TPH3205WSBQA | MOSFET GAN FET 650V 35A TO247 | ||
| TPH3202LD | GANFET N-CH 600V 9A PQFN | ||
| TPH3202LS | GANFET N-CH 600V 9A PQFN | ||
| TPH3206LD | GANFET N-CH 600V 17A PQFN | ||
| TPH3206PS | GANFET N-CH 600V 17A TO220 | ||
| TPH3207WS | GANFET N-CH 650V 50A TO247 | ||
| TPH3205WS | Neu und Original |