TPN6R

TPN6R003NL,LQ vs TPN6R003NL vs TPN6R003NL,LQ(S

 
PartNumberTPN6R003NL,LQTPN6R003NLTPN6R003NL,LQ(S
DescriptionMOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current56 A--
Rds On Drain Source Resistance6.8 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation32 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN6R003NL--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time3.3 ns--
Product TypeMOSFET--
Rise Time4.1 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time11 ns--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
TPN6R303NC,LQ MOSFET N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W
TPN6R003NL,LQ MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V
TPN6R003NLLQCT-ND Neu und Original
TPN6R003NLLQDKR-ND Neu und Original
TPN6R003NLLQTR-ND Neu und Original
TPN6R303NCLQCT-ND Neu und Original
TPN6R303NCLQDKR-ND Neu und Original
TPN6R303NCLQTR-ND Neu und Original
TPN6R003NL Neu und Original
TPN6R003NL,LQ(S Neu und Original
TPN6R003NLLQ MOSFET POWER MOSFET TRANSISTOR
TPN6R003NLLQ(S Neu und Original
TPN6R303NC Neu und Original
TPN6R303NC LQ Neu und Original
TPN6R303NC LQ(S Neu und Original
TPN6R303NC,LQ MOSFET N CH 30V 20A 8TSON-ADV
TPN6R303NCLQ Trans MOSFET N 30V 43A 8-Pin TSON - Tape and Reel (Alt: TPN6R303NC,LQ)
TPN6R303NCLQ(S Neu und Original
TPN6R003NL,LQ MOSFET N-Ch DTMOS VII-H 32W 1050pF 56A 30V
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