TPS1101

TPS1101D vs TPS1101DR vs TPS1101DG4

 
PartNumberTPS1101DTPS1101DRTPS1101DG4
DescriptionMOSFET Single P-Ch Enh-Mode MOSFETMOSFET Single P-Ch Enh-Mode MOSFETMOSFET P-CH 15V 2.3A 8-SOIC
ManufacturerTexas InstrumentsTexas Instruments-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOIC-8SOIC-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage15 V15 V-
Id Continuous Drain Current2.3 A2.3 A-
Rds On Drain Source Resistance90 mOhms90 mOhms-
Vgs Gate Source Voltage2 V, - 15 V2 V, - 15 V-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
Pd Power Dissipation791 mW791 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeReel-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesTPS1101TPS1101-
Transistor Type1 P-Channel1 P-Channel-
TypePMOS SwitchesPMOS Switches-
Width3.9 mm3.9 mm-
BrandTexas InstrumentsTexas Instruments-
Fall Time5.5 ns5.5 ns-
Product TypeMOSFETMOSFET-
Rise Time5.5 ns5.5 ns-
Factory Pack Quantity752500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time6.5 ns6.5 ns-
Unit Weight0.002677 oz0.002677 oz-
Hersteller Teil # Beschreibung RFQ
Texas Instruments
Texas Instruments
TPS1101D MOSFET Single P-Ch Enh-Mode MOSFET
TPS1101DR MOSFET Single P-Ch Enh-Mode MOSFET
TPS1101PWR MOSFET Single P-Ch Enh-Mode MOSFET
TPS1101D Darlington Transistors MOSFET Single P-Ch Enh-Mode MOSFET
TPS1101DR RF Bipolar Transistors MOSFET Single P-Ch Enh-Mode MOSFET
TPS1101DG4 MOSFET P-CH 15V 2.3A 8-SOIC
TPS1101DRG4 MOSFET P-CH 15V 2.3A 8-SOIC
TPS1101PWR MOSFET P-CH 15V 2.18A 16-TSSOP
TPS11010 Neu und Original
TPS1101DE4 Neu und Original
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