PartNumber | TSC966CW RPG | TSC966CT A3 | TSC966CT A3G |
Description | Bipolar Transistors - BJT NPN Silicon Planar Med Power Transistor | Bipolar Transistors - BJT NPN Silicon Planar Med Power Transistor | Bipolar Transistors - BJT NPN Silicon Planar Medium Power Transistor |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Package / Case | SOT-223-4 | - | TO-92-3 |
Packaging | Reel | Ammo Pack | Reel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 2000 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Transistor Polarity | - | NPN | NPN |
Technology | - | - | Si |
Mounting Style | - | - | Through Hole |
Configuration | - | - | Single |
Collector Emitter Voltage VCEO Max | - | - | 400 V |
Collector Base Voltage VCBO | - | - | 600 V |
Emitter Base Voltage VEBO | - | - | 7 V |
Collector Emitter Saturation Voltage | - | - | 0.5 V |
Maximum DC Collector Current | - | - | 300 mA |
Gain Bandwidth Product fT | - | - | 50 MHz |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
DC Current Gain hFE Max | - | - | 300 |
Continuous Collector Current | - | - | 0.3 A |
DC Collector/Base Gain hfe Min | - | - | 90 |
Pd Power Dissipation | - | - | 900 mW |
Unit Weight | - | - | 0.007654 oz |