TSM126

TSM126CX RFG vs TSM126CX vs TSM12601SMDVAPTR

 
PartNumberTSM126CX RFGTSM126CXTSM12601SMDVAPTR
DescriptionMOSFET 600V 30mA N-Channel Depletion Mode
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30 mA--
Rds On Drain Source Resistance400 Ohms--
Vgs th Gate Source Threshold Voltage2.7 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge1.18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeDepletionDepletion-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan Semiconductor--
Forward Transconductance Min0.017 S--
Fall Time135.5 ns--
Product TypeMOSFET--
Rise Time55.7 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time57.2 ns--
Typical Turn On Delay Time10.01 ns--
Unit Weight0.000282 oz0.050717 oz-
Package Case-SOT-23-3-
Id Continuous Drain Current-30 mA-
Vds Drain Source Breakdown Voltage-600 V-
Rds On Drain Source Resistance-700 Ohms-
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM126CX RFG MOSFET 600V 30mA N-Channel Depletion Mode
TSM126CX RFG MOSFET 600V 30mA N-Channel Depletion Mode
TSM126CX Neu und Original
TSM12601SMDVAPTR Neu und Original
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