 | |  | |
| PartNumber | TSM1N80CW RPG | TSM1N80CW | TSM1N80CWRPG |
| Description | MOSFET 800V N Channel Power Mosfet | MOSFET 800V N Channel Pwr MOSFET | |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-3 | SOT-223-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 300 mA | 300 mA | - |
| Rds On Drain Source Resistance | 18 Ohms | 18 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 5 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 5 nC | 5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Fall Time | 25 ns | 25 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns | 20 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16 ns | 16 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Unit Weight | 0.009171 oz | 0.008818 oz | - |
| Type | - | N-Channel | - |
| Forward Transconductance Min | - | 0.36 S | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM1N80CW RPG | MOSFET 800V N Channel Power Mosfet | |
| TSM1N80CW | MOSFET 800V N Channel Pwr MOSFET | ||
| TSM1N80CW RPG | Trans MOSFET N-CH 800V 0.3A T/R | ||
| TSM1N80CW | MOSFET 800V N Channel Pwr MOSFET | ||
| TSM1N80CWRPG | Neu und Original |