 |  | | |
| PartNumber | TSM200N03DPQ33 RGG | TSM2002 | TSM20N50CN |
| Description | MOSFET MOSFET, Dual, N-Ch Trench, 30V, 20A | ||
| Manufacturer | Taiwan Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PDFN33-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 17 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 4.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 20 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | Dual N-Channel PowerMOSFET | - | - |
| Brand | Taiwan Semiconductor | - | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 4.6 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.2 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15.8 ns | - | - |
| Typical Turn On Delay Time | 2.8 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM200N03DPQ33 RGG | MOSFET MOSFET, Dual, N-Ch Trench, 30V, 20A | |
| TSM2002 | Neu und Original | ||
| TSM20N50CN | Neu und Original | ||
| TSM20N50CZ | Neu und Original |