TSM2314C

TSM2314CX RFG vs TSM2314CX vs TSM2314CX RF

 
PartNumberTSM2314CX RFGTSM2314CXTSM2314CX RF
DescriptionMOSFET 20V N channel MOSFETMOSFET 20V N channel MOSFET
ManufacturerTaiwan SemiconductorTSC-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.9 A--
Rds On Drain Source Resistance27 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
ProductRectifiers--
Transistor Type1 N-Channel1 N-Channel-
BrandTaiwan Semiconductor--
Forward Transconductance Min40 S--
Fall Time5.9 ns--
Product TypeMOSFET--
Rise Time1.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.5 ns--
Typical Turn On Delay Time0.53 ns--
Part Aliases-RFG-
Unit Weight-0.050717 oz-
Package Case-SOT-23-3-
Vgs Gate Source Voltage-+/- 12 V-
Id Continuous Drain Current-4.9 A-
Vds Drain Source Breakdown Voltage-20 V-
Vgs th Gate Source Threshold Voltage-0.85 V-
Rds On Drain Source Resistance-33 mOhms-
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM2314CX RFG MOSFET 20V N channel MOSFET
TSM2314CX RFG Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R
TSM2314CX MOSFET 20V N channel MOSFET
TSM2314CX RF Neu und Original
TSM2314CXRF Neu und Original
TSM2314CXRFG Neu und Original
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