PartNumber | TSM2N60SCW RPG | TSM2N60ECH C5G | TSM2N60ECP ROG |
Description | MOSFET 600V 2Amp 4ohm N channel Mosfet | MOSFET 600V 2Amp N channel Power Mosfet | MOSFET 600V 2Amp 4ohm N channel Power Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | SOT-223-3 | TO-251-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 600 mA | 2 A | 2 A |
Rds On Drain Source Resistance | 3.6 Ohms | 3.2 Ohms | 3.2 Ohms |
Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 3 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 13 nC | 9.5 nC | 9.5 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.5 W | 52.1 W | 52.1 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Tube | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Fall Time | 24 ns | 21 ns | 21 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 21 ns | 22 ns | 22 ns |
Factory Pack Quantity | 2500 | 3750 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 41 ns | 41 ns |
Typical Turn On Delay Time | 12 ns | 21 ns | 21 ns |
Unit Weight | 0.009171 oz | 0.011993 oz | 0.011993 oz |