PartNumber | TSM2N7000KCT | TSM2N7000 | TSM2N7000CTA3 |
Description | IGBT Transistors MOSFET 60V 0.2Amp N channel MOSFET | ||
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
Product Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | - |
Packaging | Reel | Reel | - |
Part Aliases | A3G | A3G | - |
Unit Weight | 0.016000 oz | 0.016000 oz | - |
Mounting Style | Through Hole | Through Hole | - |
Package Case | TO-92-3 | TO-92-3 | - |
Technology | Si | Si | - |
Number of Channels | 1 Channel | 1 Channel | - |
Configuration | Single | Single | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Id Continuous Drain Current | 300 mA | 300 mA | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
Rds On Drain Source Resistance | 5 Ohms | 5 Ohms | - |
Transistor Polarity | N-Channel | N-Channel | - |