TSM2NB60CP

TSM2NB60CP ROG vs TSM2NB60CP vs TSM2NB60CP RO

 
PartNumberTSM2NB60CP ROGTSM2NB60CPTSM2NB60CP RO
DescriptionMOSFET 600V 2A N Channel MosfetTransistor: N-MOSFET, unipolar, 600V, 2A, TO252
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance3 Ohms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge9.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation44 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandTaiwan Semiconductor--
Forward Transconductance Min1.5 S--
Product TypeMOSFET--
Rise Time9.8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17.4 ns--
Typical Turn On Delay Time9.1 ns--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Id Continuous Drain Current-1 A1 A
Vds Drain Source Breakdown Voltage-600 V600 V
Rds On Drain Source Resistance-4.4 Ohms4.4 Ohms
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM2NB60CP ROG MOSFET 600V 2A N Channel Mosfet
TSM2NB60CP ROG MOSFET 600V 2A N Channel Mosfet
TSM2NB60CP Transistor: N-MOSFET, unipolar, 600V, 2A, TO252
TSM2NB60CP RO Neu und Original
TSM2NB60CPRO Neu und Original
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