TSM344

TSM3443CX6 RFG vs TSM3446CX6 RFG

 
PartNumberTSM3443CX6 RFGTSM3446CX6 RFG
DescriptionMOSFET 20V P channel MOSFETMOSFET 20V N channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-26-6SOT-26-6
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V
Id Continuous Drain Current15 A5.3 A
Rds On Drain Source Resistance48 mOhms27 mOhms
Vgs th Gate Source Threshold Voltage500 mV500 mV
Vgs Gate Source Voltage4.5 V4.5 V
Qg Gate Charge6 nC12.5 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation2 W2 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
ProductRectifiers-
Transistor Type1 P-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan Semiconductor
Forward Transconductance Min11 S-
Fall Time25 ns5 ns
Product TypeMOSFETMOSFET
Rise Time35 ns14 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time45 ns30 ns
Typical Turn On Delay Time22 ns4.6 ns
Unit Weight-0.000529 oz
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM3443CX6 RFG MOSFET 20V P channel MOSFET
TSM3446CX6 RFG MOSFET 20V N channel Mosfet
TSM3446CX6 RFG MOSFET 20V N channel Mosfet
TSM3443CX6 RFG Trans MOSFET P-CH 20V 4.7A 6-Pin SOT-26 T/R
TSM3446CX6 MOSFET 20V N channel MOSFET
TSM3442CX6 MOSFET 20V N channel MOSFET
TSM3443CX6 MOSFET 20V P channel MOSFET
TSM3441CX6 Neu und Original
TSM3442CX6 RF Neu und Original
TSM3442CX6 RFG Neu und Original
TSM3442CX6RF Neu und Original
TSM3443CX6 RF Neu und Original
TSM3443CX6PFG Neu und Original
TSM3443CX6RF Neu und Original
TSM3446CX6 RF Neu und Original
TSM3446CX6RF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TSM3446CX6RFG Neu und Original
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