TSM4435

TSM4435BCS RLG vs TSM4435BCS RL vs TSM4435SC

 
PartNumberTSM4435BCS RLGTSM4435BCS RLTSM4435SC
DescriptionMOSFET 30V N channel MosfetMOSFET 30V N Channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTSM
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOP-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current9.1 A--
Rds On Drain Source Resistance17 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge33 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Transistor Type1 P-Channel1 P-Channel-
BrandTaiwan Semiconductor--
Fall Time70 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time110 ns--
Typical Turn On Delay Time10 ns--
Unit Weight-0.030018 oz-
Package Case-SOP-8-
Id Continuous Drain Current-- 9.1 A-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-21 mOhms-
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM4435BCS RLG MOSFET 30V N channel Mosfet
TSM4435BCS RLG MOSFET P-CHANNEL 30V 9.1A 8SOP
TSM4435BCS RL MOSFET 30V N Channel Mosfet
TSM4435SC Neu und Original
TSM4435BCS Neu und Original
TSM4435CS RLG Neu und Original
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