PartNumber | TSM4NB60CH C5 | TSM4NB60CH C5G | TSM4NB50CH C5G |
Description | MOSFET 600V N channl Mosfet | MOSFET 600V N channel Mosfet | MOSFET 500V N channel Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 500 V |
Id Continuous Drain Current | 4 A | 4 A | 3 A |
Rds On Drain Source Resistance | 2.5 Ohms | 2.2 Ohms | 2.3 Ohms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 3.5 V | 3.5 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 14.5 nC | 14.5 nC | 7.6 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 50 W | 50 W | 45 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Forward Transconductance Min | 2.6 S | - | - |
Fall Time | 19 ns | 19 ns | 14 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 20 ns | 11 ns |
Factory Pack Quantity | 1875 | 3750 | 1875 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 30 ns | 19 ns |
Typical Turn On Delay Time | 11 ns | 11 ns | 10 ns |
Unit Weight | 0.012102 oz | 0.011993 oz | 0.011993 oz |