TSM4ND

TSM4ND65CI C0G vs TSM4ND60CI C0G vs TSM4ND60CI RLG

 
PartNumberTSM4ND65CI C0GTSM4ND60CI C0GTSM4ND60CI RLG
DescriptionMOSFET 650V 4A Single NChnl Power MOSFETMOSFET 600V 4A Single NChnl Power MOSFETMOSFET 600V 4A Single N-Chan Pwr MOSFET
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough Hole-
Package / CaseITO-220-3ITO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V600 V600 V
Id Continuous Drain Current4 A4 A4 A
Rds On Drain Source Resistance2.6 Ohms-2.2 Ohms
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge16.8 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation41.6 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingTubeTubeTube
SeriesTSM4ND65CITSM4ND60CITSM
Transistor Type1 N-Channel1 N-ChannelSingle N-Channel Power MOSFET
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time25 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time19 ns--
Factory Pack Quantity2000200050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time6 ns--
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM4ND65CI C0G MOSFET 650V 4A Single NChnl Power MOSFET
TSM4ND60CI C0G MOSFET 600V 4A Single NChnl Power MOSFET
TSM4ND65CI RLG MOSFET 650V 4A Single N-Chan Pwr MOSFET
TSM4ND60CI RLG MOSFET 600V 4A Single N-Chan Pwr MOSFET
TSM4ND50CPRO Neu und Original
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