PartNumber | TSM60N600CH | TSM60N600CI | TSM60N600CH C5G |
Description | MOSFET Power MOSFET, N-CHAN 600V, 8A, 600mOhm | MOSFET Power MOSFET, N-CHAN 600V, 8A, 600mOhm | MOSFET 600V, 8A, 0.6 N Channel Power Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 | ITO-220-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 8 A | 8 A | 8 A |
Rds On Drain Source Resistance | 490 mOhms | 490 mOhms | 490 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 13 nC | 13 nC | 13 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 83 W | 32 W | 83 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Fall Time | 9 ns | 9 ns | 9 ns |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 15 ns | 15 ns |
Factory Pack Quantity | 1875 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 40 ns | 40 ns | 40 ns |
Typical Turn On Delay Time | 21 ns | 21 ns | 21 ns |
Part # Aliases | C5G TSM60N600CH | C0G TSM60N600CI | - |
Unit Weight | 0.139332 oz | - | - |
Product | - | - | Rectifiers |