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| PartNumber | TSM80N1R2CI C0G | TSM80N1R2CL C0G | TSM80N1R2CH C5G |
| Description | MOSFET 800V, 5.5A, Single N Channel Power MOSFET | MOSFET 800V N channel Power Mosfet 5.5A, 1,2ohm | MOSFET Power MOSFET, N-CHAN 800V, 5.5A, 1200mOhm |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-262-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
| Id Continuous Drain Current | 5.5 A | 5.5 A | 5.5 A |
| Rds On Drain Source Resistance | 900 mOhms | 900 mOhms | 900 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
| Qg Gate Charge | 19.4 nC | 19.4 nC | 19.4 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 25 W | 110 W | 110 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 10 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 11 ns | 11 ns |
| Factory Pack Quantity | 2000 | 2000 | 3750 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 55 ns | 55 ns | 55 ns |
| Typical Turn On Delay Time | 22 ns | 22 ns | 22 ns |
| Unit Weight | 0.063493 oz | - | - |
| Product | - | - | Rectifiers |