PartNumber | TSM8N80CI C0G | TSM8N80CZ C0G | TSM8N80CZ C0 |
Description | MOSFET 800V 8A N Channel Power Mosfet | MOSFET 800V 8Amp N channel Mosfet | MOSFET 800V 8A N Channel Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | ITO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
Id Continuous Drain Current | 8 A | 8 A | 8 A |
Rds On Drain Source Resistance | 1.1 Ohms | 1.1 Ohms | 1.1 Ohms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 41 nC | 41 nC | 41 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 40.3 W | 250 W | 250 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Forward Transconductance Min | 7 S | - | 7 S |
Fall Time | 37 ns | 37 ns | 37 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 30 ns | 30 ns | 30 ns |
Factory Pack Quantity | 2000 | 2000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | 172 ns | 37 ns |
Typical Turn On Delay Time | 133 ns | 133 ns | 133 ns |
Unit Weight | 0.211644 oz | 0.063493 oz | 0.211644 oz |