TSM8N8

TSM8N80CI C0G vs TSM8N80CZ C0G vs TSM8N80CZ C0

 
PartNumberTSM8N80CI C0GTSM8N80CZ C0GTSM8N80CZ C0
DescriptionMOSFET 800V 8A N Channel Power MosfetMOSFET 800V 8Amp N channel MosfetMOSFET 800V 8A N Channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseITO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V800 V
Id Continuous Drain Current8 A8 A8 A
Rds On Drain Source Resistance1.1 Ohms1.1 Ohms1.1 Ohms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge41 nC41 nC41 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation40.3 W250 W250 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Forward Transconductance Min7 S-7 S
Fall Time37 ns37 ns37 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time30 ns30 ns30 ns
Factory Pack Quantity200020001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time37 ns172 ns37 ns
Typical Turn On Delay Time133 ns133 ns133 ns
Unit Weight0.211644 oz0.063493 oz0.211644 oz
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM8N80CI C0G MOSFET 800V 8A N Channel Power Mosfet
TSM8N80CZ C0G MOSFET 800V 8Amp N channel Mosfet
TSM8N80CZ C0 MOSFET 800V 8A N Channel Mosfet
TSM8N80CI C0G MOSFET 800V 8A N Channel Power Mosfet
TSM8N80CZ C0G 800V N-Channel Power MOSFET
TSM8N80CZ C0 MOSFET 800V 8A N Channel Mosfet
TSM8N80CI Neu und Original
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