PartNumber | TSM9N90ECI C0G | TSM9N90ECZ C0G | TSM9NB50CI C0G |
Description | MOSFET 900V 9Amp 1.4 N channel Mosfet | MOSFET 900V 9Amp 1,4ohm N channel Mosfet | MOSFET 500V 9Amp N channel Mosfet |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | ITO-220-3 | TO-220-3 | ITO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 900 V | 900 V | 500 V |
Id Continuous Drain Current | 9 A | 9 A | 9 A |
Rds On Drain Source Resistance | 1.13 Ohms | 1.13 Ohms | 720 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2.5 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 72 nC | 72 nC | 44 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 89 W | 290 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Reel |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Fall Time | 159 ns | 159 ns | 5.7 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 97 ns | 97 ns | 46.8 ns |
Factory Pack Quantity | 2000 | 2000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 212 ns | 212 ns | 13.3 ns |
Typical Turn On Delay Time | 52 ns | 52 ns | 27.4 ns |
Unit Weight | 0.059966 oz | 0.063493 oz | - |