TSM9N

TSM9N90ECI C0G vs TSM9N90ECZ C0G vs TSM9NB50CI C0G

 
PartNumberTSM9N90ECI C0GTSM9N90ECZ C0GTSM9NB50CI C0G
DescriptionMOSFET 900V 9Amp 1.4 N channel MosfetMOSFET 900V 9Amp 1,4ohm N channel MosfetMOSFET 500V 9Amp N channel Mosfet
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseITO-220-3TO-220-3ITO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V900 V500 V
Id Continuous Drain Current9 A9 A9 A
Rds On Drain Source Resistance1.13 Ohms1.13 Ohms720 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2.5 V
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge72 nC72 nC44 nC
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation89 W290 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time159 ns159 ns5.7 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time97 ns97 ns46.8 ns
Factory Pack Quantity200020001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time212 ns212 ns13.3 ns
Typical Turn On Delay Time52 ns52 ns27.4 ns
Unit Weight0.059966 oz0.063493 oz-
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM9N90ECI C0G MOSFET 900V 9Amp 1.4 N channel Mosfet
TSM9N90ECZ C0G MOSFET 900V 9Amp 1,4ohm N channel Mosfet
TSM9NB50CI C0G MOSFET 500V 9Amp N channel Mosfet
TSM9NB50CZ C0G MOSFET 500V 9Amp N channel Mosfet
TSM9ND50CI C0G MOSFET 500V 9A 0.9Ohm Sng N-Chan Pwr MOSFET
TSM9N90CI C0G MOSFET 900V 9A N Channel Power Mosfet
TSM9N90CZ C0 MOSFET 900V 9A N Channel Mosfet
TSM9N50CI Neu und Original
TSM9N50CI CO Neu und Original
TSM9N50CZ Neu und Original
TSM9NB50CI Neu und Original
TSM9NB50CZ Neu und Original
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