PartNumber | TT8J2 | TT8J2 TR | TT8J21 |
Description | |||
Manufacturer | Rohm Semiconductor | - | Rohm Semiconductor |
Product Category | FETs - Arrays | - | FETs - Arrays |
Series | TT8J21 | - | TT8J21 |
Packaging | Digi-ReelR Alternate Packaging | - | Digi-ReelR Alternate Packaging |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package Case | 8-SMD, Flat Lead | - | 8-SMD, Flat Lead |
Technology | Si | - | Si |
Operating Temperature | 150°C (TJ) | - | 150°C (TJ) |
Mounting Type | Surface Mount | - | Surface Mount |
Number of Channels | 2 Channel | - | 2 Channel |
Supplier Device Package | 8-TSST | - | 8-TSST |
Configuration | Dual Dual Drain | - | Dual Dual Drain |
FET Type | 2 P-Channel (Dual) | - | 2 P-Channel (Dual) |
Power Max | 650mW | - | 650mW |
Transistor Type | 2 P-Channel | - | 2 P-Channel |
Drain to Source Voltage Vdss | 20V | - | 20V |
Input Capacitance Ciss Vds | 1270pF @ 10V | - | 1270pF @ 10V |
FET Feature | Logic Level Gate | - | Logic Level Gate |
Current Continuous Drain Id 25°C | 2.5A | - | 2.5A |
Rds On Max Id Vgs | 68 mOhm @ 2.5A, 4.5V | - | 68 mOhm @ 2.5A, 4.5V |
Vgs th Max Id | 1V @ 1mA | - | 1V @ 1mA |
Gate Charge Qg Vgs | 12nC @ 4.5V | - | 12nC @ 4.5V |
Pd Power Dissipation | 1.25 W | - | 1.25 W |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Fall Time | 30 ns | - | 30 ns |
Rise Time | 30 ns | - | 30 ns |
Vgs Gate Source Voltage | 10 V | - | 10 V |
Id Continuous Drain Current | 2.5 A | - | 2.5 A |
Vds Drain Source Breakdown Voltage | - 20 V | - | - 20 V |
Rds On Drain Source Resistance | 68 mOhms | - | 68 mOhms |
Transistor Polarity | P-Channel | - | P-Channel |
Typical Turn Off Delay Time | 120 ns | - | 120 ns |
Typical Turn On Delay Time | 9 ns | - | 9 ns |
Channel Mode | Enhancement | - | Enhancement |