TT8J2

TT8J2 vs TT8J2 TR vs TT8J21

 
PartNumberTT8J2TT8J2 TRTT8J21
Description
ManufacturerRohm Semiconductor-Rohm Semiconductor
Product CategoryFETs - Arrays-FETs - Arrays
SeriesTT8J21-TT8J21
PackagingDigi-ReelR Alternate Packaging-Digi-ReelR Alternate Packaging
Mounting StyleSMD/SMT-SMD/SMT
Package Case8-SMD, Flat Lead-8-SMD, Flat Lead
TechnologySi-Si
Operating Temperature150°C (TJ)-150°C (TJ)
Mounting TypeSurface Mount-Surface Mount
Number of Channels2 Channel-2 Channel
Supplier Device Package8-TSST-8-TSST
ConfigurationDual Dual Drain-Dual Dual Drain
FET Type2 P-Channel (Dual)-2 P-Channel (Dual)
Power Max650mW-650mW
Transistor Type2 P-Channel-2 P-Channel
Drain to Source Voltage Vdss20V-20V
Input Capacitance Ciss Vds1270pF @ 10V-1270pF @ 10V
FET FeatureLogic Level Gate-Logic Level Gate
Current Continuous Drain Id 25°C2.5A-2.5A
Rds On Max Id Vgs68 mOhm @ 2.5A, 4.5V-68 mOhm @ 2.5A, 4.5V
Vgs th Max Id1V @ 1mA-1V @ 1mA
Gate Charge Qg Vgs12nC @ 4.5V-12nC @ 4.5V
Pd Power Dissipation1.25 W-1.25 W
Maximum Operating Temperature+ 150 C-+ 150 C
Minimum Operating Temperature- 55 C-- 55 C
Fall Time30 ns-30 ns
Rise Time30 ns-30 ns
Vgs Gate Source Voltage10 V-10 V
Id Continuous Drain Current2.5 A-2.5 A
Vds Drain Source Breakdown Voltage- 20 V-- 20 V
Rds On Drain Source Resistance68 mOhms-68 mOhms
Transistor PolarityP-Channel-P-Channel
Typical Turn Off Delay Time120 ns-120 ns
Typical Turn On Delay Time9 ns-9 ns
Channel ModeEnhancement-Enhancement
Hersteller Teil # Beschreibung RFQ
TT8J21TR MOSFET P Chan-20V-2.5A Mid-PowerSwitching
TT8J2TR MOSFET SW MOSFET MIDDLE PWR P CH -30V-2.5A
TT8J2 Neu und Original
TT8J2 TR Neu und Original
TT8J21 Neu und Original
TT8J21 FU7TL Neu und Original
TT8J21TR MOSFET 2P-CH 20V 2.5A TSST8
TT8J2TR MOSFET 2P-CH 30V 2.5A TSST8
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