UMH4NT

UMH4NTN vs UMH4NTN 0.04 vs UMH4NTN(H4)

 
PartNumberUMH4NTNUMH4NTN 0.04UMH4NTN(H4)
DescriptionBipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-363
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Mounting StyleSMD/SMT--
Package / CaseUMT-6--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation150 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesUMH4N--
PackagingReel--
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO5 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandROHM Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUMH4N--
Unit Weight0.001235 oz--
Hersteller Teil # Beschreibung RFQ
UMH4NTN Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-363
UMH4NTN 0.04 Neu und Original
UMH4NTN(H4) Neu und Original
UMH4NTN TRANS 2NPN PREBIAS 0.15W UMT6
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