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| PartNumber | V20100SG-E | V20100SG-E3 | V20100SG-E3/4W |
| Description | Schottky Diodes & Rectifiers 20 Amp 100 Volt Single TrenchMOS | ||
| Manufacturer | Vishay Semiconductor Diodes Division | - | Vishay Semiconductor Diodes Division |
| Product Category | Diodes, Rectifiers - Single | - | Diodes, Rectifiers - Single |
| Series | TMBSR | - | TMBSR |
| Product | Schottky Rectifiers | - | Schottky Rectifiers |
| Packaging | Tube | - | Tube |
| Unit Weight | 0.065257 oz | - | 0.065257 oz |
| Mounting Style | Through Hole | - | Through Hole |
| Tradename | TMBS | - | TMBS |
| Package Case | TO-220-3 | - | TO-220-3 |
| Technology | Si | - | Si |
| Mounting Type | Through Hole | - | Through Hole |
| Supplier Device Package | TO-220AB | - | TO-220AB |
| Configuration | Single Dual Anode | - | Single Dual Anode |
| Speed | Fast Recovery = 200mA (Io) | - | Fast Recovery = 200mA (Io) |
| Diode Type | Schottky | - | Schottky |
| Current Reverse Leakage Vr | 350μA @ 100V | - | 350μA @ 100V |
| Voltage Forward Vf Max If | 1.07V @ 20A | - | 1.07V @ 20A |
| Voltage DC Reverse Vr Max | 100V | - | 100V |
| Current Average Rectified Io | 20A | - | 20A |
| Reverse Recovery Time trr | - | - | - |
| Capacitance Vr F | - | - | - |
| Operating Temperature Junction | -40°C ~ 150°C | - | -40°C ~ 150°C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 40 C | - | - 40 C |
| Vf Forward Voltage | 1.07 V | - | 1.07 V |
| Ir Reverse Current | 350 uA | - | 350 uA |
| If Forward Current | 20 A | - | 20 A |
| Vrrm Repetitive Reverse Voltage | 100 V | - | 100 V |
| Ifsm Forward Surge Current | 150 A | - | 150 A |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| V20100SG-E | Neu und Original | ||
| V20100SG-E3 | Neu und Original | ||
| V20100SG-E34W | Neu und Original | ||
Vishay |
V20100SG-E3/4W | Schottky Diodes & Rectifiers 20 Amp 100 Volt Single TrenchMOS |