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| PartNumber | VEC2616-TL-W | VEC2616-TL-W-CUT TAPE | VEC2616-TL-W-Z |
| Description | MOSFET PCH+NCH 4V DRIVE SERIES | MOSFET N/P-CH 60V 3A/2.5A VEC8 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VEC-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 3 A, 2.5 A | - | - |
| Rds On Drain Source Resistance | 116 mOhms, 194 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V, 2.6 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 10 nC, 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 900 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | VEC2616 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 2.6 S, 3.9 S | - | - |
| Fall Time | 22 ns, 36 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.5 ns, 9.8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 41 ns, 65 ns | - | - |
| Typical Turn On Delay Time | 7.3 ns, 6.4 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| VEC2616-TL-W | MOSFET PCH+NCH 4V DRIVE SERIES | ||
| VEC2616-TL-W-CUT TAPE | Neu und Original | ||
ON Semiconductor |
VEC2616-TL-W | MOSFET N/P-CH 60V 3A/2.5A VEC8 | |
| VEC2616-TL-W-Z | MOSFET N/P-CH 60V 3A/2.5A VEC8 |