VP2450N3-G

VP2450N3-G vs VP2450N3-G P002 vs VP2450N3-G P003

 
PartNumberVP2450N3-GVP2450N3-G P002VP2450N3-G P003
DescriptionMOSFET 500V 30OhmRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFETRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochip Technology-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance30 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkReel-
Height5.33 mm--
Length5.21 mm--
Transistor Type1 P-Channel1 P-Channel-
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Fall Time25 ns25 ns-
Product TypeMOSFET--
Rise Time25 ns25 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns45 ns-
Typical Turn On Delay Time10 ns10 ns-
Unit Weight0.016000 oz0.016000 oz-
Package Case-TO-92-3-
Pd Power Dissipation-1 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 100 mA-
Vds Drain Source Breakdown Voltage-- 500 V-
Rds On Drain Source Resistance-35 Ohms-
Hersteller Teil # Beschreibung RFQ
Microchip Technology
Microchip Technology
VP2450N3-G MOSFET 500V 30Ohm
VP2450N3-G P013 MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G MOSFET P-CH 500V 0.1A TO92-3
VP2450N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP2450N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
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