PartNumber | VP2450N3-G | VP2450N3-G P002 | VP2450N3-G P003 |
Description | MOSFET 500V 30Ohm | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET |
Manufacturer | Microchip | Microchip Technology | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-92-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 100 mA | - | - |
Rds On Drain Source Resistance | 30 Ohms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Bulk | Reel | - |
Height | 5.33 mm | - | - |
Length | 5.21 mm | - | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Type | FET | - | - |
Width | 4.19 mm | - | - |
Brand | Microchip Technology | - | - |
Fall Time | 25 ns | 25 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 25 ns | 25 ns | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 45 ns | 45 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Unit Weight | 0.016000 oz | 0.016000 oz | - |
Package Case | - | TO-92-3 | - |
Pd Power Dissipation | - | 1 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | - 100 mA | - |
Vds Drain Source Breakdown Voltage | - | - 500 V | - |
Rds On Drain Source Resistance | - | 35 Ohms | - |