VS-GT100

VS-GT100DA120UF vs VS-GT100DA120U vs VS-GT100DA60U

 
PartNumberVS-GT100DA120UFVS-GT100DA120UVS-GT100DA60U
DescriptionDiscrete Semiconductor Modules 1200V, 100A IGBT SOT-227 Bplr TnstrIGBT 1200V 258A 893W SOT-227IGBT 600V 184A 577W SOT-227
ManufacturerVishay-Vishay Semiconductor Diodes Division
Product CategoryDiscrete Semiconductor Modules-IGBTs - Modules
RoHSY--
ProductDiode Power Modules--
TypeIGBT Module--
Vf Forward Voltage2.8 V--
Mounting StyleSMD/SMT--
Package / CaseSOT-227-4--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle-Single
BrandVishay Semiconductors--
Transistor PolarityN-Channel--
Fall Time118 ns--
Pd Power Dissipation890 W--
Product TypeDiscrete Semiconductor Modules--
Rise Time55 ns--
Factory Pack Quantity10--
SubcategoryDiscrete Semiconductor Modules--
Typical Turn Off Delay Time244 ns--
Typical Turn On Delay Time131 ns--
Vgs th Gate Source Threshold Voltage5.8 V--
Series---
Package Case--SOT-227-4, miniBLOC
Mounting Type--Chassis Mount
Supplier Device Package--SOT-227
Input--Standard
Power Max--577W
Current Collector Ic Max--184A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--100μA
IGBT Type--Trench
Vce on Max Vge Ic--2V @ 15V, 100A
Input Capacitance Cies Vce---
NTC Thermistor--No
Hersteller Teil # Beschreibung RFQ
Vishay Semiconductors
Vishay Semiconductors
VS-GT100DA120UF Discrete Semiconductor Modules 1200V, 100A IGBT SOT-227 Bplr Tnstr
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VS-GT100NA120UX IGBT Modules RECOMMENDED ALT 78-VS-GT105NA120UX
Vishay
Vishay
VS-GT100DA120U IGBT 1200V 258A 893W SOT-227
VS-GT100DA60U IGBT 600V 184A 577W SOT-227
VS-GT100DA120UF OUTPUT & SW MODULES - SOT-227 IG
VS-GT100LA120UX IGBT 1200V 134A 463W SOT-227
VS-GT100NA120UX IGBT 1200V 134A 463W SOT-227
VS-GT100TP120N IGBT 1200V 180A 652W INT-A-PAK
VS-GT100TP60N IGBT 600V 160A 417W INT-A-PAK
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