VT6X2

VT6X2T2R vs VT6X2 vs VT6X2 T2R

 
PartNumberVT6X2T2RVT6X2VT6X2 T2R
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN 50V 0.1A 6PIN
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseVMT-6--
Transistor PolarityNPN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage100 mV--
Maximum DC Collector Current200 mA--
Gain Bandwidth Product fT350 MHz--
Maximum Operating Temperature+ 150 C--
SeriesVT6X2VT6X2-
DC Current Gain hFE Max560 at 1 mA, 6 V--
PackagingReelTape & Reel (TR)-
BrandROHM Semiconductor--
Continuous Collector Current100 mA--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity8000--
SubcategoryTransistors--
Part # AliasesVT6X2--
Package Case-6-SMD-
Mounting Type-Surface Mount-
Supplier Device Package-VMT6-
Power Max-150mW-
Transistor Type-2 NPN (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-120 @ 1mA, 6V-
Vce Saturation Max Ib Ic-300mV @ 5mA, 50mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-350MHz-
Hersteller Teil # Beschreibung RFQ
VT6X2T2R Bipolar Transistors - BJT TRANS GP BJT NPN 50V 0.1A 6PIN
VT6X2 Neu und Original
VT6X2 T2R Neu und Original
VT6X2T2R TRANS 2NPN 50V 0.1A 6VMT
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