 |  |  | |
| PartNumber | WPB4002-1E | WPB4001-1E | WPB4002 |
| Description | MOSFET N-CH Pwr MOSFET 600V 23A 0.36Ohm | IGBT Transistors MOSFET N-CH Pwr MOSFET 500V 26A 0.26Ohm | RF Bipolar Transistors MOSFET NCH 10V DRIVE SERIES |
| Manufacturer | ON Semiconductor | - | ON Semiconductor |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3P-3 | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 23 A | - | - |
| Rds On Drain Source Resistance | 360 mOhms | - | - |
| Packaging | Tube | - | Tray |
| Series | WPB4002 | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.245577 oz | - | 0.245577 oz |
| Package Case | - | - | TO-3P-3 |
| Id Continuous Drain Current | - | - | 23 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Rds On Drain Source Resistance | - | - | 360 mOhms |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
WPB4002-1E | MOSFET N-CH Pwr MOSFET 600V 23A 0.36Ohm | |
| WPB4002-1E | IGBT Transistors MOSFET N-CH Pwr MOSFET 600V 23A 0.36Ohm | ||
| WPB4001-1E | IGBT Transistors MOSFET N-CH Pwr MOSFET 500V 26A 0.26Ohm | ||
| WPB4002 | RF Bipolar Transistors MOSFET NCH 10V DRIVE SERIES | ||
| WPB4001 | Neu und Original |